Fast-switching insulated gate transistors
Abstract
Insulated gate transistors (IGT's) with high-speed gate turn-off capability have been developed by using electron irradiation to reduce the minority-carrier lifetime in the drift region. Gate turnoff times as low as 200 ns have been achieved. These devices have been found to offer a unique advantage in the ability to tradeoff conduction and switching losses which allows optimization of device characteristics for each application.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- December 1983
- DOI:
- Bibcode:
- 1983IEDL....4..452B
- Keywords:
-
- Gates (Circuits);
- Semiconductor Devices;
- Transistor Circuits;
- Carrier Lifetime;
- Electric Potential;
- Fabrication;
- Field Effect Transistors;
- High Speed;
- Minority Carriers;
- Tradeoffs;
- Electronics and Electrical Engineering;
- Insulation;
- Voltage;
- Current density;
- Pulse measurements;
- Electrons;
- MOSFET circuits;
- Power MOSFET;
- Switching circuits;
- Time measurement;
- Switching loss