Diamond transistor performance and fabrication
Abstract
The author reviews some of the device properties of diamonds, as well as recently developed diamond device fabrication techniques for high-frequency, high-power transistors. Two advantages of diamond over other semiconductors used for high-frequency, high power devices are its high thermal conductivity and high electric-field breakdown. Homoepitaxial diamond has been grown by both plasma and hot-filament techniques. The device properties of homoepitaxial diamond produced by the hot-filament technique are reviewed. Much of the development necessary for the production of diamond devices already exists. Doping by homoepitaxy, diamond etching, device quality SiO/sub 2/-diamond interface, and ohmic contact technology are reviewed. The remaining problems are the development of large area single crystal diamond substrates, improvement of doping techniques, and refinement in ohmic contact technology.
- Publication:
-
IEEE Proceedings
- Pub Date:
- May 1991
- DOI:
- Bibcode:
- 1991IEEEP..79..669G
- Keywords:
-
- Crystal Growth;
- Diamonds;
- Semiconductors (Materials);
- Single Crystals;
- Thermal Conductivity;
- Transistors;
- Boron;
- Electrical Faults;
- Energy Dissipation;
- Silicon Carbides;
- Electronics and Electrical Engineering;
- Fabrication;
- Thermal conductivity;
- Doping;
- Ohmic contacts;
- Electric breakdown;
- Semiconductor device breakdown;
- Plasma applications;
- Plasma properties;
- Plasma devices;
- Production