Abstract

The 30th Annual IEEE Compound Semiconductor IC Symposium was held in Monterey, CA, on October 12–15, 2008. For 30 years, this international forum (formerly the GaAs IC Symposium) has been the premier venue for showcasing the most important breakthroughs and developments in integrated circuit technology employing compound semiconductors such as GaAs, InP, GaN, and SiGe, and more recently, development and demonstration of competitive CMOS alternatives. For the first time this year, the CSICS meeting was held in concert with the IEEE Bipolar Circuits and Technology Meeting (BCTM), bringing together an even broader high-performance circuit community with complementary sessions on device and circuit technology development across a diverse range of technologies and applications.