Since 1999 our Newton Aycliffe team has continuously delivered best-in-class gallium arsenide products and foundry processes to leading defense, aerospace, automotive and telecom customers. Compound Photonics builds on this legacy. We continue to actively support our customers by delivering high performance, reliable, high power, low noise and switching pHEMT technologies and products.
Compound Photonics
GaAs pHEMT Foundry Services
GaAs pHEMT Foundry Services
Open for Business
Compound Photonics GaAs Fab
Compound Photonics GaAs Fab
Advanced pHEMT MMIC Processes
Our technically advanced 0.25µm stepper-based, six inch semiconductor pHEMT processes are optimized for flexible and efficient high yield processing from prototype runs to high volume production. All of our technology and service offerings are supported by an ISO 9001 accredited quality system
Our offerings span:
- Material growth
- pHEMT MMIC process fabrication
- DC and RF On Wafer (RFOW) testing
- Die singulation and processing
- Visual inspection (automated wafer, automated singulated die and manual metallurgical microscope )
- Engineering support services
-
- Die pick and place
- Die bonding
- Wire bonding
- Failure analysis
- Reliability testing
A Partner with Knowhow, Proven Processes & Manufacturing Scale
Compound Photonics has the expertise, proven processes and manufacturing scale to deliver. Our team of dedicated engineers, process experts and technicians is committed to building long-term partnerships with our customers.
THE RIGHT CHOICE FOR GaAs APPLICATIONS
- Defense
- Aerospace
- Automotive
- Telecom infrastructure
Compound Photonics GaAs Custom Foundry Services Process Technology Offerings
GaAs Low Noise pHEMT
- 0.25 μm power MMIC pHEMT process technology
- fT=50GHz
- Drain voltage up to 7V
- Through wafer vias
- TaN precision resistors
- Capacitor densities of 200, 390, and 780pF/mm2
- Two interconnect metal layers-2.1 and 4.1µm of Au with air bridge crossovers
- Provides low noise, medium power, and high linearity for applications including
- Low-noise
- Transmitter frontends MMIC’s
GaAs High Power pHEMT
- .3µm power MMIC pHEMT process technology
- fT = 40GHz
- Drain voltage up to 10V
- Through wafer vias TaN precision resistors
- Capacitor densities of 200 and 550 pF/mm2
- Two interconnect metal layers-2.1 and 4.1µm of Au with air bridge crossovers
- Applications include military radar and EW
GaAs Switching pHEMT
- 0.6μm switch pHEMT process technology
- Capacitor density of 295pF/mm2
- Two interconnect metal layers-0.4 and 2.1μm of Au with dielectric crossovers
- Provides low noise, high-linearity switching of RF signals for applications
- Cellular handsets
- Antenna switching